vishay siliconix SUU09N10-76P document number: 63456 s11-2184-rev. a, 07-nov-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 100 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ? dc/dc converters ? motor control notes: a. duty cycle ? 1 %. b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr-4 material). d. package limited product summary v ds (v) r ds(on) ( ? ) max. i d (a) q g (typ.) 100 0.076 at v gs = 10 v 9 d 8.5 0.096 at v gs = 6 v 9 d ordering information SUU09N10-76P-ge3 (lead (pb)-free and halogen-free) to-251 s gd top view drain connected to drain-tab d g s n-channel mosfet absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 100 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 9 d a t c = 70 c 9 d pulsed drain current (t = 300 s) i dm 20 avalanche current i as 18 single avalanche energy a l = 0.1 mh e as 16.2 mj maximum power dissipation a t c = 25 c p d 32.1 b w t a = 25 c c 2.5 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 50 c/w junction-to-case (drain) r thjc 3.9
www.vishay.com 2 document number: 63456 s11-2184-rev. a, 07-nov-11 vishay siliconix SUU09N10-76P this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 100 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 4 gate-body leakage i gss v ds = 0 v, v gs = 20 v 250 na zero gate voltage drain current i dss v ds = 100 v, v gs = 0 v 1 a v ds = 100 v, v gs = 0 v, t j = 125 c 50 v ds = 100 v, v gs = 0 v, t j = 150 c 250 on-state drain current a i d(on) v ds ? 10 v, v gs = 10 v 15 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 6.1 a 0.063 0.076 ? v gs = 6 v, i d = 5.4 a 0.080 0.096 forward transconductance a g fs v ds = - 20 v, i d = 6.1 a 13 s dynamic b input capacitance c iss v gs = 0 v, v ds = 50 v, f = 1 mhz 505 pf output capacitance c oss 71 reverse transfer capacitance c rss 35 total gate charge c q g v ds = 50 v, v gs = 10 v, i d = 6.1 a 12.7 19.1 nc v ds = 50 v, v gs = 4.5 v, i d = 6.1 a 8.5 12.8 gate-source charge c q gs 3.6 gate-drain charge c q gd 4 gate resistance r g f = 1 mhz 0.2 0.9 1.8 ? tu r n - o n d e l ay t i m e c t d(on) v dd = 50 v, r l = 10.2 ? i d ? 4.9 a, v gen = 10 v, r g = 1 ? 714 ns rise time c t r 11 20 turn-off delay time c t d(off) 11 20 fall time c t f 612 drain-source body diode ratings and characteristics t c = 25 c b continuous current i s 9 a pulsed current i sm 20 forward voltage a v sd i f = 4.9 a, v gs = 0 v 0.82 1.5 v reverse recovery time t rr i f = 4.9 a, di/dt = 100 a/s 36 53 ns peak reverse recovery current i rm(rec) 2.7 4.1 a reverse recovery charge q rr 46 69 nc
vishay siliconix SUU09N10-76P document number: 63456 s11-2184-rev. a, 07-nov-11 www.vishay.com 3 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) output characteristics transfer characteristics transconductance 0 5 10 15 20 01234 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 10 v thru 6 v v gs = 5 v 0 0.3 0.6 0.9 1.2 1.5 01.534.56 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 5 10 15 20 0 2 4 6 8 10 g fs - transconductance (s) i d - drain current (a) t c = 25 c t c = 125 c t c = - 55 c on-resistance vs. drain current on-resistance vs. gate-to-source voltage gate charge 0.030 0.054 0.078 0.102 0.126 03691215 r ds(on) - on-resistance () i d -drain current (a) v gs = 6 v v gs = 10 v 0 0.05 0.10 0.15 0.20 467910 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 6.1a 0 2 4 6 8 10 03691215 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 80 v v ds = 25 v v ds = 50 v i d = 6.1 a
www.vishay.com 4 document number: 63456 s11-2184-rev. a, 07-nov-11 vishay siliconix SUU09N10-76P this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage capacitance on-resistance vs. junction temperature 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c 0 200 400 600 800 0 20406080100 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss 0.5 0.9 1.3 1.7 2.1 -50-250 255075100125150 r ds(on) -on-resistance (normalized) t j - junction temperature ( c) v gs = 6 v i d = 6.1 a v gs = 10 v threshold voltage drain source breakdown vs. junction temperature current derating 1.9 2.3 2.7 3.1 3.5 3.9 - 50 - 25 0 25 50 75 100 125 150 v gs(th) (v) t j -temperature ( c) i d = 250 a 97 102 107 112 117 122 - 50 - 25 0 25 50 75 100 125 150 v ds - drain-to-source voltage (v) t j -temperature ( c) i d = 250 a 0 4 8 12 16 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c)
vishay siliconix SUU09N10-76P document number: 63456 s11-2184-rev. a, 07-nov-11 www.vishay.com 5 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63456 . single pulse avalanche current capability vs. time 1 10 0.000001 0.00001 0.0001 0.001 0.01 i dav (a) time (s) t j = 25 c t j = 150 c safe operating area 0.01 0.1 1 10 100 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified dc, 10 s 1 s, 100 ms limited by r ds(on) * 1 ms t c = 25 c single pulse bvdss limited 10 ms 100 s normalized thermal transient impedance, junction-to-case 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.05 single pulse 0.02
package information www.vishay.com vishay siliconix revision: 03-jun-13 1 document number: 71666 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-251aa (ipak) ? ? note ? dimension l3 is for reference only. l2 b1 b b2 e l3 l1 l d c a1 c1 a e millimeters inches dim. min. max. min. max. a 2.21 2.38 0.087 0.094 a1 0.89 1.14 0.035 0.045 b 0.71 0.89 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.43 0.206 0.214 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 e 6.48 6.73 0.255 0.265 e 2.28 bsc 0.090 bsc l 8.89 9.53 0.350 0.375 l1 1.91 2.28 0.075 0.090 l2 0.89 1.27 0.035 0.050 l3 1.15 1.52 0.045 0.060 ecn: t13-0362-rev. f, 03-jun-13 ? dwg: 5346
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